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MUN5335DW1T1G - onsemi

Description: Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

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PCB Footprints
MUN5335DW1T1G - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SC-88 SC70-6 CASE 419B-02 ISSUE Y
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3D Models
MUN5335DW1T1G - onsemi  - 3D model - SOT23 (6-Pin) - SC-88 SC70-6 CASE 419B-02 ISSUE Y
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MUN5335DW1T1G Details

  • Manufacturer Part Number:

    MUN5335DW1T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-88/SC70-6/SOT-363 6 LEAD

  • Pin Count:

    6

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT-IN BIAS RESISTOR RATIO 21.36

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    80

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN AND PNP

  • Power Dissipation-Max (Abs):

    0.385 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MUN5335DW1T1G Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve thermal performance. A minimum of 2 oz copper thickness and a thermal relief pattern is recommended. Refer to the onsemi application note AND8325/D for more details.
  • Ensure that the device is operated within the recommended operating temperature range (-40°C to 150°C). Use a heat sink or thermal interface material to improve heat dissipation. Monitor the device's junction temperature (TJ) to prevent overheating.
  • The MUN5335DW1T1G has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-safe environment.
  • Yes, the MUN5335DW1T1G is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101 and is PPAP capable. However, additional testing and validation may be required for specific applications.
  • Check the input voltage, output load, and feedback resistors for correct configuration. Verify that the device is operated within the recommended operating conditions. Use an oscilloscope to monitor the output voltage and check for oscillations or noise.

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MUN5335DW1T1G Overview

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