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MUR880E - onsemi

Description: Obsolete - Power Rectifier, Ultra-Fast Recovery, Switch-mode, 1 A, 50 V

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PCB Footprints
MUR880E - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220 TWO−LEAD CASE 221B−04 ISSUE F
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MUR880E - onsemi  - 3D model - Transistor Outline, Vertical - TO−220 TWO−LEAD CASE 221B−04 ISSUE F
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MUR880E Details

  • Manufacturer Part Number:

    MUR880E

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AC 2 LEAD

  • Package Description:

    CASE 221B-04, 2 PIN

  • Pin Count:

    2

  • Manufacturer Package Code:

    221B-04

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    FREE WHEELING DIODE, LOW LEAKAGE CURRENT

  • Application:

    ULTRA FAST RECOVERY POWER

  • Breakdown Voltage-Min:

    800 V

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.8 V

  • JEDEC-95 Code:

    TO-220AC

  • JESD-30 Code:

    R-PSFM-T2

  • JESD-609 Code:

    e0

  • Non-rep Pk Forward Current-Max:

    100 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    8 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    235

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    800 V

  • Reverse Current-Max:

    25 µA

  • Reverse Recovery Time-Max:

    0.1 µs

  • Reverse Test Voltage:

    800 V

  • Surface Mount:

    NO

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

MUR880E Frequently Asked Questions (FAQs)

  • The recommended PCB layout for the MUR880E involves using a thermal pad on the bottom of the device, and connecting it to a large copper area on the PCB to dissipate heat. The copper area should be at least 1 inch² (6.45 cm²) in size and should be connected to a ground plane or a heat sink to further reduce thermal resistance.
  • To ensure proper soldering, use a soldering iron with a temperature of 250°C to 260°C, and apply a small amount of solder paste to the thermal pad. Use a soldering technique that minimizes the time the iron is in contact with the device. Avoid applying excessive force or pressure, which can damage the device.
  • The MUR880E has a maximum surge current rating of 100 A for 10 ms, which is not explicitly stated in the datasheet. This rating is based on the device's internal construction and testing, and it's essential to consider this when designing the circuit to ensure the device can handle expected surge currents.
  • While the MUR880E is primarily designed for low-frequency applications, it can be used in high-frequency switching applications up to 100 kHz. However, the device's performance may degrade at higher frequencies due to increased switching losses and reduced efficiency. It's essential to carefully evaluate the device's performance and thermal management in high-frequency applications.
  • The optimal gate resistance for the MUR880E depends on the specific application and switching frequency. A general guideline is to use a gate resistance between 10 Ω and 100 Ω. A lower gate resistance can reduce switching losses but may increase the risk of oscillation, while a higher gate resistance can reduce oscillation risk but increase switching losses.

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