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MURA130T3G - onsemi

Description: Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; High Temperature Glass Passivated Junction; Low Forward Voltage Drop (0.8 Volts Max @ 1.0 A, TJ = 150?C) Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 70 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Shipped in 12 mm Tape and Reel, 5000 unit

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MURA130T3G - onsemi PCB footprint - Diodes Moulded - Diodes Moulded - MURA130T3G
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MURA130T3G Details

  • Manufacturer Part Number:

    MURA130T3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SMA

  • Package Description:

    LEAD FREE, PLASTIC, CASE 403D-02, SMA, 2 PIN

  • Pin Count:

    2

  • Manufacturer Package Code:

    403D-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    111 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    FREE WHEELING DIODE

  • Application:

    HIGH VOLTAGE ULTRA FAST RECOVERY POWER

  • Breakdown Voltage-Min:

    300 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.1 V

  • JESD-30 Code:

    R-PDSO-C2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    35 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    300 V

  • Reverse Current-Max:

    5 µA

  • Reverse Recovery Time-Max:

    0.065 µs

  • Reverse Test Voltage:

    300 V

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

MURA130T3G Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the MURA130T3G is 10V to 30V, with a maximum voltage rating of 40V.
  • To ensure proper biasing, connect the base of the transistor to a voltage source through a resistor, and connect the emitter to ground through a resistor. The collector should be connected to the load.
  • The maximum current rating for the MURA130T3G is 13A, with a maximum peak current rating of 26A.
  • To protect the MURA130T3G from overheating, ensure proper heat sinking, use a heat sink with a thermal resistance of 1.5°C/W or less, and avoid operating the transistor at maximum power for extended periods.
  • The storage temperature range for the MURA130T3G is -55°C to 150°C.

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MURA130T3G Overview

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Part Image MURA130T3 onsemi

Rectifier Diode, 1 Phase, 1 Element, 2A, 300V V(RRM), Silicon