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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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MURA105T3G
onsemi
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1 | Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; High Temperature Glass Passivated Junction; Low Forward Voltage Drop (0.66 Volts Max @ 1.0 A, TJ = 150?C) Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 70 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Polarity: Polarity Band Indicates Cathod | Diodes Moulded | MURA105T3G |
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MURA160T3G
onsemi
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1 | Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; High Temperature Glass Passivated Junction; Low Forward Voltage Drop (1.05 Volts Max @ 1.0 A, TJ = 150°C) Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 70 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Shipped in 12 mm Tape and Reel, 5000 uni | Diodes Moulded | MURA160T3G |
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MURA120T3G
onsemi
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1 | Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; High Temperature Glass Passivated Junction; Low Forward Voltage Drop (0.71 Volts Max @ 1.0 A, TJ = 150?C) Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 70 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Shipped in 12 mm Tape and Reel, 5000 uni | Diodes Moulded | MURA120T3G |
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MURA140T3G
onsemi
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1 | Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; High Temperature Glass Passivated Junction; Low Forward Voltage Drop (0.8 Volts Max @ 1.0 A, TJ = 150?C) Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 70 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Shipped in 12 mm Tape and Reel, 5000 unit | Diodes Moulded | MURA140T3G |
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MURA110T3G
onsemi
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1 | Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; High Temperature Glass Passivated Junction; Low Forward Voltage Drop (0.66 Volts Max @ 1.0 A, TJ = 150?C) Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 70 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Polarity: Polarity Band Indicates Cathod | Diodes Moulded | MURA110T3G |
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MURA130T3G
onsemi
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1 | Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; High Temperature Glass Passivated Junction; Low Forward Voltage Drop (0.8 Volts Max @ 1.0 A, TJ = 150?C) Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 70 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Shipped in 12 mm Tape and Reel, 5000 unit | Diodes Moulded | MURA130T3G |
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MURA115T3G
onsemi
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1 | Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; High Temperature Glass Passivated Junction; Low Forward Voltage Drop (0.71 Volts Max @ 1.0 A, TJ = 150?C) Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 70 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Shipped in 12 mm Tape and Reel, 5000 uni | Diodes Moulded | MURA115T3G |
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MURA1J_R1_00001
PanJit Semiconductor
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1 | Rectifier Diode, 1 Phase, 1 Element, 1A, 600V V(RRM), Silicon, DO-214AC | MURA1J_R1_00001 |
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MURA1J_R2_00001
PanJit Semiconductor
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1 | Rectifier Diode, 1 Phase, 1 Element, 1A, 600V V(RRM), Silicon, DO-214AC | MURA1J_R2_00001 |
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MURA110
SUNMATE electronic Co., LTD
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1 | Surface mount ultrafast power rectifier diode in SMA/DO-214AC case, 50 to 600V repetitive peak reverse voltage, 1.0A average forward current, 35ns maximum reverse recovery time, glass passivated die construction. | MURA110 |
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MURA115T3G
Rochester Electronics LLC
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1 | 2 A, 150 V, SILICON, RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE 403D-02, SMA , 2 PIN | MURA115T3G |
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MURA130
SUNMATE electronic Co., LTD
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1 | Surface mount ultrafast power rectifier diode in SMA (DO-214AC) package, 1.0 A average forward current, 50 to 600 V repetitive peak reverse voltage, 35 ns maximum reverse recovery time, glass passivated die construction.Surface mount ultrafast power rectifier diode in SMA (DO-214AC) package, 1.0A average forward current, 50 to 600V repetitive peak reverse voltage, 35ns maximum reverse recovery time, glass passivated die construction.Surface mount ultrafast power rectifier diode in SMA/DO-214AC case, 1.0 A average forward current, 50 to 600 V repetitive peak reverse voltage, 35 ns maximum reverse recovery time, glass passivated die, solderable terminals.Surface mount ultrafast power rectifier diode in SMA/DO-214AC case, 50 to 600V repetitive peak reverse voltage, 1.0A average forward current, 35ns maximum reverse recovery time, glass passivated die construction.Surface mount ultrafast power rectifier diode in SMA (DO-214AC) package, 1.0A average forward current, 50 to 600V repetitive peak reverse voltage, glass passivated, low forward voltage drop, 35ns reverse recovery time. | MURA130 |
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MURA105T3
onsemi
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1 | Rectifier Diode, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon | MURA105T3 |
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MURA110
Galaxy Microelectronics
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1 | Rectifier Diode, 1 Phase, 1 Element, 1A, 100V V(RRM), Silicon | MURA110 |
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MURA140T3
onsemi
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1 | Rectifier Diode, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon | MURA140T3 |
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MURA115
SUNMATE electronic Co., LTD
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1 | Surface mount ultrafast power rectifier diode in SMA (DO-214AC) package, 1.0A average forward current, 50 to 600V repetitive peak reverse voltage, 35ns maximum reverse recovery time, glass passivated die construction. | MURA115 |
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MURA105
EIC Semiconductor Inc
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1 | Rectifier Diode, | MURA105 |
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MURA110
SynSemi Inc
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1 | Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AC | MURA110 |
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MURA160
Taitron Components Inc
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1 | Rectifier Diode, 1 Phase, 1 Element, 1A, 600V V(RRM), Silicon | MURA160 |
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MURA115T3
onsemi
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1 | Rectifier Diode, 1 Phase, 1 Element, 2A, 150V V(RRM), Silicon | MURA115T3 |
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MURA120T3
onsemi
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1 | Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon | MURA120T3 |
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MURA140
Taitron Components Inc
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1 | Rectifier Diode, 1 Phase, 1 Element, 1A, 400V V(RRM), Silicon | MURA140 |
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MURA140
SynSemi Inc
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1 | Rectifier Diode | MURA140 |
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MURA120
SUNMATE electronic Co., LTD
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1 | Surface mount ultrafast power rectifier diode in SMA (DO-214AC) package, 1.0 A average forward current, 50 to 600 V repetitive peak reverse voltage, 35 ns maximum reverse recovery time, glass passivated die construction.Surface mount ultrafast power rectifier diode in SMA (DO-214AC) package, 1.0A average forward current, 50 to 600V repetitive peak reverse voltage, 35ns maximum reverse recovery time, glass passivated die construction. | MURA120 |
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MURA105
SUNMATE electronic Co., LTD
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1 | Surface mount ultrafast power rectifier diode in SMA/DO-214AC case, 1.0 A average forward current, 50 to 600 V repetitive peak reverse voltage, 35 ns maximum reverse recovery time, glass passivated die, solderable terminals. | MURA105 |
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