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MURA110T3G - onsemi

Description: Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; High Temperature Glass Passivated Junction; Low Forward Voltage Drop (0.66 Volts Max @ 1.0 A, TJ = 150?C) Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 70 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Polarity: Polarity Band Indicates Cathod

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MURA110T3G - onsemi PCB footprint - Diodes Moulded - Diodes Moulded - SMA CASE 403D-02
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MURA110T3G - onsemi  - 3D model - Diodes Moulded - SMA CASE 403D-02
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MURA110T3G Details

  • Manufacturer Part Number:

    MURA110T3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SMA

  • Package Description:

    SMA, 2 PIN

  • Pin Count:

    2

  • Manufacturer Package Code:

    403D-02

  • Country Of Origin:

    Mainland China, Vietnam

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Additional Feature:

    FREE WHEELING DIODE

  • Application:

    HIGH VOLTAGE ULTRA FAST RECOVERY POWER

  • Breakdown Voltage-Min:

    100 V

  • Case Connection:

    NONE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.875 V

  • JESD-30 Code:

    R-PDSO-C2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    50 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    100 V

  • Reverse Current-Max:

    2 µA

  • Reverse Recovery Time-Max:

    30 µs

  • Reverse Test Voltage:

    100 V

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

MURA110T3G Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve thermal performance. A minimum of 2 oz copper thickness is recommended for the thermal pad. Additionally, thermal vias can be used to improve heat dissipation.
  • Ensure that the device is operated within the recommended operating temperature range (-55°C to 150°C). Use a heat sink or thermal interface material to improve heat dissipation. Also, ensure that the device is not exposed to thermal shocks or rapid temperature changes.
  • The maximum allowed voltage on the gate pin is ±20V. Exceeding this voltage may damage the device.
  • Handle the device by the body or use an ESD wrist strap to prevent ESD damage. Use ESD-protected workstations and follow proper ESD handling procedures.
  • The recommended gate resistor value is between 10Ω to 100Ω. A lower value can improve switching speed, but may increase power consumption. A higher value can reduce power consumption, but may slow down switching speed.

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MURA110T3G Overview

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