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MURA115T3G - onsemi

Description: Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; High Temperature Glass Passivated Junction; Low Forward Voltage Drop (0.71 Volts Max @ 1.0 A, TJ = 150?C) Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 70 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Shipped in 12 mm Tape and Reel, 5000 uni

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MURA115T3G - onsemi PCB footprint - Diodes Moulded - Diodes Moulded - SMA CASE 403D ISSUE H
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MURA115T3G - onsemi  - 3D model - Diodes Moulded - SMA CASE 403D ISSUE H
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MURA115T3G Details

  • Manufacturer Part Number:

    MURA115T3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SMA

  • Package Description:

    SMA, 2 PIN

  • Pin Count:

    2

  • Manufacturer Package Code:

    403D-02

  • Country Of Origin:

    Mainland China, Vietnam

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Additional Feature:

    FREE WHEELING DIODE

  • Application:

    HIGH VOLTAGE ULTRA FAST RECOVERY POWER

  • Breakdown Voltage-Min:

    150 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.71 V

  • JESD-30 Code:

    R-PDSO-C2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    40 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    150 V

  • Reverse Current-Max:

    2 µA

  • Reverse Recovery Time-Max:

    0.035 µs

  • Reverse Test Voltage:

    150 V

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

MURA115T3G Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the MURA115T3G is 10V to 30V, with a maximum voltage rating of 40V.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and add a pull-down resistor (e.g., 10 kΩ) from the gate to ground. This helps to prevent unwanted turn-on and ensures stable operation.
  • The maximum current rating for the MURA115T3G is 115A, with a maximum pulsed current rating of 230A.
  • Use a voltage regulator or a zener diode to clamp the voltage, and consider adding a current sense resistor and a fuse or a current limiter to protect against overcurrent conditions.
  • The thermal resistance of the MURA115T3G is 1.5°C/W. Ensure proper heat sinking by using a heat sink with a thermal resistance of 1°C/W or lower, and apply a thermal interface material (e.g., thermal paste) to the device.

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MURA115T3G Overview

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Part Image MURA115T3 onsemi

Rectifier Diode, 1 Phase, 1 Element, 2A, 150V V(RRM), Silicon