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MURS210T3G - onsemi

Description: Polarity: Polarity Band Indicates Cathode Lead; High Temperature Glass Passivated Junction; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Case: Epoxy, Molded; Marking: U2A, U2B; Weight: 95 mg (approximately); Shipped in 12 mm Tape and Reel, 2500 units per reel; Low Forward Voltage Drop (0.74 Volts Max @ 2.0 A, TJ = 150°C) Mechanical Characteristics:; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Small Compact Surface M

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MURS210T3G - onsemi PCB footprint - Diodes Moulded - Diodes Moulded - SZ1SMB5918BT3G
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MURS210T3G - onsemi  - 3D model - Diodes Moulded - SZ1SMB5918BT3G
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MURS210T3G Details

  • Manufacturer Part Number:

    MURS210T3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SMB

  • Pin Count:

    2

  • Manufacturer Package Code:

    403A-03

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    111 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    FREE WHEELING DIODE

  • Application:

    HIGH VOLTAGE ULTRA FAST RECOVERY POWER

  • Breakdown Voltage-Min:

    100 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.94 V

  • JESD-30 Code:

    R-PDSO-C2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    100 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -60 °C

  • Output Current-Max:

    2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    100 V

  • Reverse Current-Max:

    2 µA

  • Reverse Recovery Time-Max:

    0.03 µs

  • Reverse Test Voltage:

    100 V

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

MURS210T3G Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. Multiple vias can be used to connect the thermal pad to an inner layer or the backside of the PCB for better heat dissipation.
  • Ensure that the device is operated within the recommended temperature range (up to 150°C). Use a heat sink or thermal interface material to improve heat dissipation. Monitor the device's junction temperature and adjust the operating conditions accordingly.
  • Handle the device by the body, not the leads. Avoid bending or twisting the leads. Store the device in a dry, cool place, away from direct sunlight and moisture. Use anti-static packaging and handling procedures to prevent ESD damage.
  • The gate resistor value depends on the specific application and the required switching frequency. A higher gate resistor value can reduce EMI, but may increase switching losses. A lower gate resistor value can reduce switching losses, but may increase EMI. Consult the application note or onsemi's support team for guidance.
  • Ensure that the devices are matched in terms of electrical characteristics and thermal performance. Use a common gate drive signal and ensure that the devices are thermally coupled to prevent thermal runaway. Consult the application note or onsemi's support team for guidance on paralleling multiple devices.

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MURS210T3G Overview

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