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MURS480ET3G - onsemi

Description: 20mJ Avalanche Energy Guaranteed; Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits; Ultrafast 75 Nanosecond Recovery Time; 175C Operating Junction Temperature; Low Forward Voltage; Low Leakage Current; High Temperature Glass Passivated Junction; Reverse Voltage to 800V; This is a Pb-Free Device; Case: Epoxy, Molded; Weight: 217 mg (Approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead Temperature for Soldering Pu

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PCB Footprints
MURS480ET3G - onsemi PCB footprint - Diodes Moulded - Diodes Moulded - SMC CASE403-03
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3D Models
MURS480ET3G - onsemi  - 3D model - Diodes Moulded - SMC CASE403-03
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MURS480ET3G Details

  • Manufacturer Part Number:

    MURS480ET3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SMC

  • Package Description:

    SMC, 2 PIN

  • Pin Count:

    2

  • Manufacturer Package Code:

    403AC

  • Country Of Origin:

    Vietnam

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Additional Feature:

    FREE WHEELING DIODE, LOW LEAKAGE CURRENT

  • Application:

    ULTRA FAST RECOVERY POWER

  • Breakdown Voltage-Min:

    800 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.53 V

  • JESD-30 Code:

    R-PDSO-C2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    70 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    4 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    800 V

  • Reverse Current-Max:

    25 µA

  • Reverse Recovery Time-Max:

    0.1 µs

  • Reverse Test Voltage:

    800 V

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

MURS480ET3G Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the MURS480ET3G is 10V to 30V, with a typical voltage of 15V.
  • To ensure proper biasing, connect the gate to the source through a 1kΩ to 10kΩ resistor, and apply a voltage source between the drain and source. The gate voltage should be around 2-4V higher than the source voltage.
  • The maximum current rating for the MURS480ET3G is 4.8A, with a pulsed current rating of 14.4A.
  • Use a voltage regulator or a zener diode to limit the voltage, and consider adding a current-sensing resistor and a fuse or a current limiter to prevent overcurrent conditions.
  • The thermal resistance (RθJA) of the MURS480ET3G is 62°C/W, and the thermal resistance (RθJC) is 4°C/W.

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MURS480ET3G Overview

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