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NAND01GR3B2CZA6E - Micron

Description: VFBGA63 9.5 x 12 x 1 mm, 0.8 mm pitch

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PCB Footprints
NAND01GR3B2CZA6E - Micron PCB footprint - BGA - BGA - 63-VFBGA
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NAND01GR3B2CZA6E - Micron  - 3D model - BGA - 63-VFBGA
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NAND01GR3B2CZA6E Details

  • Manufacturer Part Number:

    NAND01GR3B2CZA6E

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    BGA

  • Package Description:

    9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VFBGA-63

  • Pin Count:

    63

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    Micron Technology Inc

  • YTEOL:

    0

  • Access Time-Max:

    25000 ns

  • Command User Interface:

    YES

  • Data Polling:

    NO

  • JESD-30 Code:

    R-PBGA-B63

  • Length:

    11 mm

  • Memory Density:

    1073741824 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Number of Functions:

    1

  • Number of Sectors/Size:

    1K

  • Number of Terminals:

    63

  • Number of Words:

    134217728 words

  • Number of Words Code:

    128000000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    128MX8

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TFBGA

  • Package Equivalence Code:

    BGA63,10X12,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, THIN PROFILE, FINE PITCH

  • Page Size:

    2K words

  • Parallel/Serial:

    PARALLEL

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Programming Voltage:

    1.8 V

  • Qualification Status:

    Not Qualified

  • Ready/Busy:

    YES

  • Seated Height-Max:

    1.05 mm

  • Sector Size:

    128K

  • Standby Current-Max:

    0.00005 A

  • Supply Current-Max:

    0.02 mA

  • Supply Voltage-Max (Vsup):

    1.95 V

  • Supply Voltage-Min (Vsup):

    1.7 V

  • Supply Voltage-Nom (Vsup):

    1.8 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Toggle Bit:

    NO

  • Type:

    SLC NAND TYPE

  • Width:

    9 mm

NAND01GR3B2CZA6E Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the NAND01GR3B2CZA6E is -40°C to 85°C.
  • Bad block management is typically handled by the controller or the host system. The NAND01GR3B2CZA6E does not have built-in bad block management. The host system should implement a bad block management scheme to detect and replace bad blocks.
  • The typical write endurance of the NAND01GR3B2CZA6E is 3,000 to 5,000 program/erase cycles, depending on the specific application and usage.
  • Wear leveling is typically implemented by the controller or the host system. A wear leveling algorithm should be implemented to distribute write cycles evenly across the entire NAND flash to ensure even wear and extend the lifespan of the device.
  • The recommended power-on sequence for the NAND01GR3B2CZA6E is to apply VCC first, followed by VCCQ, and then the clock signal. The power-on sequence should be controlled to prevent voltage overshoot or undershoot.

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