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NCS20072DR2G - onsemi

Description: Rail−To−Rail Output; Wide Supply Range: 2.7 V to 36 V; Wide Bandwidth: 3 MHz typical at VS = 2.7 V; High Slew Rate: 2.8 V/µs typical at VS = 2.7 V; Low Supply Current: 405 µA per channel at VS = 2.7 V; Low Input Bias Current: 5 pA typical; Wide Temperature Range: −40°C to 125°C; NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable

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NCS20072DR2G Details

  • Manufacturer Part Number:

    NCS20072DR2G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8

  • Manufacturer Package Code:

    751-07

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.33.00.01

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.75

  • Amplifier Type:

    OPERATIONAL AMPLIFIER

  • Average Bias Current-Max (IIB):

    0.0015 µA

  • Common-mode Reject Ratio-Nom:

    125 dB

  • Input Offset Voltage-Max:

    4000 µV

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Length:

    4.9 mm

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    2

  • Number of Terminals:

    8

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SOP

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Seated Height-Max:

    1.75 mm

  • Slew Rate-Nom:

    2.7 V/us

  • Supply Voltage Limit-Max:

    40 V

  • Supply Voltage-Nom (Vsup):

    5 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    AUTOMOTIVE

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Unity Gain BW-Nom:

    3200

  • Width:

    3.9 mm

NCS20072DR2G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout guidelines. Also, consider derating the device's power dissipation at high temperatures.
  • A 10uF to 22uF X7R or X5R ceramic capacitor is recommended for input decoupling. The capacitor should be placed as close to the device as possible.
  • Use a shielded enclosure, keep the device and its traces away from the PCB edge, and use a common-mode choke or ferrite bead on the input lines. Also, ensure good grounding and decoupling.
  • The maximum allowed voltage on the enable pin (EN) is 6V. Exceeding this voltage may damage the device.

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NCS20072DR2G Overview

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Part Image NCV20072DR2G onsemi

Operational Amplifier, 2 Func, 4000uV Offset-Max, CMOS, PDSO8