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NCS20074DR2G - onsemi

Description: Rail−To−Rail Output; Wide Supply Range: 2.7 V to 36 V; Wide Bandwidth: 3 MHz typical at VS = 2.7 V; High Slew Rate: 2.8 V/µs typical at VS = 2.7 V; Low Supply Current: 405 µA per channel at VS = 2.7 V; Low Input Bias Current: 5 pA typical; Wide Temperature Range: −40°C to 125°C; Available in a variety of packages; NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable

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NCS20074DR2G - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC-14
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NCS20074DR2G Details

  • Manufacturer Part Number:

    NCS20074DR2G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-14 NB

  • Manufacturer Package Code:

    751A-03

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.33.00.01

  • Manufacturer:

    onsemi

  • YTEOL:

    5.75

  • Amplifier Type:

    OPERATIONAL AMPLIFIER

  • Average Bias Current-Max (IIB):

    0.0015 µA

  • Common-mode Reject Ratio-Nom:

    125 dB

  • Input Offset Voltage-Max:

    4000 µV

  • JESD-30 Code:

    R-PDSO-G14

  • JESD-609 Code:

    e3

  • Length:

    8.65 mm

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    4

  • Number of Terminals:

    14

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SOP

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Seated Height-Max:

    1.75 mm

  • Slew Rate-Nom:

    2.7 V/us

  • Supply Voltage Limit-Max:

    40 V

  • Supply Voltage-Nom (Vsup):

    5 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    AUTOMOTIVE

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Unity Gain BW-Nom:

    3200

  • Width:

    3.9 mm

NCS20074DR2G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the device can help to dissipate heat efficiently. The datasheet provides a recommended land pattern, but a more detailed layout guide can be found in the onsemi application note AND8327/D.
  • The NCS20074DR2G requires a specific biasing scheme to achieve optimal performance. A recommended biasing circuit is shown in the datasheet, but it's essential to ensure that the voltage supply is stable and noise-free. Additionally, the input and output impedance should be matched to minimize signal reflections.
  • While the datasheet specifies a maximum operating frequency of 2.7 GHz, the actual frequency limit depends on the specific application and PCB layout. In general, the device can operate up to 3.5 GHz or higher with proper design and layout considerations.
  • The NCS20074DR2G has a power-down mode that can be controlled through the EN pin. When the EN pin is low, the device enters a low-power state, reducing current consumption. However, it's essential to ensure that the input signals are properly terminated and the output is not loaded during power-down to prevent damage.
  • The NCS20074DR2G has a maximum junction temperature of 150°C. To ensure reliable operation, the device should be mounted on a heat sink or a PCB with a thermal relief pattern. The datasheet provides thermal resistance values, but it's essential to consider the specific application and environmental conditions.

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