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NCV8440ASTT3G - onsemi

Description: Diode Clamp Between Gate and Source; ESD Protection HBM 5000 V; Active Overvoltage Gate to Drain Clamp; Scalable to Lower or Higher RDS(on); Internal Series Gate Resistance

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PCB Footprints
NCV8440ASTT3G - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT-223 -2020
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3D Models
NCV8440ASTT3G - onsemi  - 3D model - SOT223 (3-Pin) - SOT-223 -2020
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NCV8440ASTT3G Details

  • Manufacturer Part Number:

    NCV8440ASTT3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-223 (TO-261) 4 LEAD

  • Package Description:

    TO-261, 4 PIN

  • Pin Count:

    4

  • Manufacturer Package Code:

    0.0318

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    110 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    52 V

  • Drain Current-Max (ID):

    2.6 A

  • Drain-source On Resistance-Max:

    0.11 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-261AA

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.69 W

  • Pulsed Drain Current-Max (IDM):

    10 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NCV8440ASTT3G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NCV8440ASTT3G is -40°C to 150°C.
  • To ensure the stability of the output voltage, it is recommended to use a minimum output capacitance of 10uF and a maximum ESR of 1 ohm.
  • The recommended input capacitor value for the NCV8440ASTT3G is 1uF to 10uF, with a voltage rating of 10V or higher.
  • Yes, the NCV8440ASTT3G is suitable for high-reliability applications, as it is built with a robust design and has undergone rigorous testing and qualification.
  • The power dissipation of the NCV8440ASTT3G can be calculated using the formula: Pd = (Vin - Vout) x Iout, where Vin is the input voltage, Vout is the output voltage, and Iout is the output current.

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NCV8440ASTT3G Overview

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