Part Image

NDD02N60Z-1G - onsemi

Description: Obsolete - Power MOSFET 600V 2.2A 4.8 Ohm Single N-Channel DPAK

Download NDD02N60Z-1G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NDD02N60Z-1G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IPAK CASE 369D ISSUE C
click to zoom
3D Models
NDD02N60Z-1G - onsemi  - 3D model - Transistor Outline, Vertical - IPAK CASE 369D ISSUE C
click to zoom

NDD02N60Z-1G Details

  • Manufacturer Part Number:

    NDD02N60Z-1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK INSERTION MOUNT

  • Package Description:

    IPAK-3

  • Pin Count:

    4

  • Manufacturer Package Code:

    369

  • Reach Compliance Code:

    Not Compliant

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    2.2 A

  • Drain-source On Resistance-Max:

    4.8 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    57 W

  • Pulsed Drain Current-Max (IDM):

    9 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NDD02N60Z-1G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the NDD02N60Z-1G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general guideline is to ensure that the device operates within the recommended voltage and current ratings, and that the junction temperature remains below 150°C.
  • To ensure proper biasing, follow the recommended operating conditions outlined in the datasheet. This includes setting the gate-source voltage (Vgs) within the recommended range (typically -2V to 10V), and ensuring the drain-source voltage (Vds) and drain current (Id) are within the specified limits. Additionally, consider using a gate driver or voltage regulator to maintain a stable bias voltage.
  • For optimal thermal performance, ensure the PCB layout provides adequate heat dissipation. This can be achieved by using a thermal pad or heat sink, and placing the device on a thick copper layer. Keep the device away from other heat sources, and ensure good airflow around the device. Follow the recommended land pattern and thermal design guidelines provided in the datasheet or application notes.
  • To protect the NDD02N60Z-1G from ESD, follow proper handling and storage procedures. Use an anti-static wrist strap or mat when handling the device, and store the device in an anti-static bag or container. Ensure the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays, and follow proper soldering and assembly procedures to minimize the risk of ESD damage.
  • The reliability and lifespan of the NDD02N60Z-1G depend on various factors, including operating conditions, environmental factors, and manufacturing quality. The device is designed to meet the reliability standards outlined in the datasheet, with a typical lifespan of 10-15 years or more, depending on the application and operating conditions. Follow proper design, manufacturing, and testing procedures to ensure the device meets the expected reliability and lifespan.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NDD02N60Z-1G Overview

Use the download button to access the NDD02N60Z-1G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like NDD02, or try a keyword search, such as Power Field-Effect Transistors

Parts related to NDD02N60Z-1G

Showing 0 results