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NDD02N60ZT4G - onsemi

Description: Obsolete - Power MOSFET 400V 2.1A 3.4 OHM Single N-Channel DPAK

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NDD02N60ZT4G - onsemi PCB footprint - Other - Other - DPAK (SINGLE GUAGE) CASE 369AA−01 ISSUE B
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NDD02N60ZT4G Details

  • Manufacturer Part Number:

    NDD02N60ZT4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK 4 LEAD Single Gauge Surface Mount

  • Package Description:

    DPAK-3

  • Pin Count:

    4

  • Manufacturer Package Code:

    369AA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    2.2 A

  • Drain-source On Resistance-Max:

    4.8 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    57 W

  • Pulsed Drain Current-Max (IDM):

    9 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NDD02N60ZT4G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NDD02N60ZT4G is -55°C to 150°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 10V, and the drain-source voltage (Vds) should be between 10V and 600V.
  • The recommended gate resistor value is between 1kΩ and 10kΩ, depending on the specific application and switching frequency.
  • Yes, the NDD02N60ZT4G is suitable for high-frequency switching applications up to 1 MHz, but the user should ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • To protect the NDD02N60ZT4G from ESD, use proper handling and storage procedures, and consider adding ESD protection devices such as TVS diodes or ESD arrays in the circuit design.

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