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NDD03N50ZT4G - onsemi

Description: Obsolete - Power MOSFET 600V 2.6A 3.6 Ohm Single N-Channel DPAK

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Symbol
NDD03N50ZT4G - onsemi - PCB symbol
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PCB Footprints
NDD03N50ZT4G - onsemi PCB footprint - Other - Other - DPAK (SINGLE GAUGE) TO-252 (369C) ISSUE F
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3D Models
NDD03N50ZT4G - onsemi - 3D model - Other - DPAK (SINGLE GAUGE) TO-252 (369C) ISSUE F
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NDD03N50ZT4G Details

  • Manufacturer Part Number:

    NDD03N50ZT4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK 4 LEAD Single Gauge Surface Mount

  • Package Description:

    DPAK-3

  • Pin Count:

    4

  • Manufacturer Package Code:

    369AA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    2.6 A

  • Drain-source On Resistance-Max:

    0.0033 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    58 W

  • Pulsed Drain Current-Max (IDM):

    10 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NDD03N50ZT4G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NDD03N50ZT4G is -55°C to 150°C.
  • To ensure reliability, follow the recommended assembly and soldering procedures, and ensure that the device is operated within the specified voltage and current ratings. Additionally, consider using a thermal management strategy to keep the device within its recommended operating temperature range.
  • The recommended PCB layout for the NDD03N50ZT4G involves using a thermal pad and thermal vias to dissipate heat. A heat sink or thermal interface material can also be used to improve thermal performance. Consult the onsemi application note for more detailed guidance.
  • To prevent electrostatic discharge (ESD) damage, handle the NDD03N50ZT4G with ESD-protective equipment, such as wrist straps and mats. Ensure that the device is stored in an ESD-protective package, and follow proper handling and assembly procedures.
  • The recommended gate drive circuits for the NDD03N50ZT4G involve using a gate driver IC with a suitable voltage rating and current capability. Consult the onsemi application note for more detailed guidance on gate drive circuit design.

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NDD03N50ZT4G Overview

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