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NDF02N60ZG - onsemi

Description: Obsolete - Power MOSFET 600V 2.4A 4.8 Ohm Single N-Channel TO-220FP

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PCB Footprints
NDF02N60ZG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 FULLPAK CASE 221AH ISSUE F
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3D Models
NDF02N60ZG - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 FULLPAK CASE 221AH ISSUE F
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NDF02N60ZG Details

  • Manufacturer Part Number:

    NDF02N60ZG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220 3 LEAD FULLPAK

  • Package Description:

    FULL PACK-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    221AH

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    2.4 A

  • Drain-source On Resistance-Max:

    4.8 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    24 W

  • Pulsed Drain Current-Max (IDM):

    10 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

NDF02N60ZG Frequently Asked Questions (FAQs)

  • The maximum SOA for the NDF02N60ZG is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be determined by plotting the device's voltage and current ratings against the thermal resistance and maximum junction temperature.
  • To ensure proper cooling, consider the device's thermal resistance, maximum junction temperature, and the thermal design of the PCB and surrounding components. Use thermal simulation tools or consult with a thermal expert to determine the optimal cooling solution for your design.
  • The recommended gate drive voltage for the NDF02N60ZG is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can reduce switching losses, but may also increase the risk of gate oxide damage.
  • To minimize EMI, use proper PCB layout techniques, such as separating high-frequency and low-frequency circuits, using shielding, and minimizing loop areas. Additionally, consider using EMI filters or common-mode chokes to reduce radiated emissions.
  • The maximum allowed dv/dt for the NDF02N60ZG is not explicitly stated in the datasheet, but it is typically in the range of 1-10 kV/μs. Exceeding this limit can cause the device to malfunction or fail. Consult with an application engineer or refer to the device's application notes for more information.

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NDF02N60ZG Overview

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Part Image NDF02N60ZH onsemi

Power Field-Effect Transistor, 2.4A I(D), 600V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB