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NDF05N50ZG - onsemi

Description: Obsolete - Power MOSFET 500V 5A 1.5 Ohm Single N-Channel TO-220FP

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NDF05N50ZG - onsemi - PCB symbol
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PCB Footprints
NDF05N50ZG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 FULLPAK CASE 221AH ISSUE F
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3D Models
NDF05N50ZG - onsemi - 3D model - Transistor Outline, Vertical - TO-220 FULLPAK CASE 221AH ISSUE F
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NDF05N50ZG Details

  • Manufacturer Part Number:

    NDF05N50ZG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220 3 LEAD FULLPAK

  • Package Description:

    FULLPACK-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    221AH

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    130 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    5.5 A

  • Drain-source On Resistance-Max:

    1.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    25 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    30 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NDF05N50ZG Frequently Asked Questions (FAQs)

  • The maximum SOA for the NDF05N50ZG is typically defined by the device's voltage and current ratings. However, it's recommended to consult the application note or contact onsemi support for specific SOA guidance.
  • Proper thermal management involves ensuring good heat sinking, using thermal interface materials, and keeping the device within its recommended operating temperature range. Consult the datasheet and application notes for specific thermal design guidelines.
  • The recommended gate drive voltage for the NDF05N50ZG is typically between 10V to 15V, but it's essential to consult the datasheet and application notes for specific gate drive requirements.
  • Yes, the NDF05N50ZG is suitable for high-frequency switching applications. However, it's crucial to consider the device's switching characteristics, such as rise and fall times, and ensure proper PCB layout and decoupling to minimize ringing and EMI.
  • To prevent ESD damage, handle the NDF05N50ZG with ESD-protective equipment, such as wrist straps and mats. Ensure proper grounding and follow proper handling procedures to minimize the risk of ESD damage.

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NDF05N50ZG Overview

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NDF05N50ZG Alternates

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Part Image FDPF5N50NZ onsemi

Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Part Image NDF05N50ZH onsemi

Power Field-Effect Transistor, 5.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB