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NDF10N60ZG - onsemi

Description: Obsolete - Power MOSFET 600V 10A 0.75 Ù Single N-Channel TO-220FP

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PCB Footprints
NDF10N60ZG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 FULLPAK CASE 221AH ISSUE F
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3D Models
NDF10N60ZG - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 FULLPAK CASE 221AH ISSUE F
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NDF10N60ZG Details

  • Manufacturer Part Number:

    NDF10N60ZG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220 3 LEAD FULLPAK

  • Package Description:

    FULL PACK-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    221AH

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    300 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.75 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    39 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

NDF10N60ZG Frequently Asked Questions (FAQs)

  • The maximum SOA for the NDF10N60ZG is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general guideline, the maximum SOA is typically limited by the device's thermal resistance (RθJA) and the maximum junction temperature (Tj). For the NDF10N60ZG, the maximum SOA is approximately 10A at 25°C and 5A at 100°C.
  • To ensure optimal performance, the NDF10N60ZG should be biased with a gate-source voltage (Vgs) between 4V and 10V, and a drain-source voltage (Vds) within the recommended operating range. Additionally, the device should be operated within the recommended temperature range (-55°C to 150°C) and with a suitable heat sink to maintain a safe junction temperature.
  • For optimal thermal performance, it is recommended to use a multi-layer PCB with a thermal via structure to dissipate heat efficiently. The device should be mounted on a heat sink with a thermal interface material (TIM) to minimize thermal resistance. A minimum of 2oz copper thickness is recommended for the PCB, and the device should be placed near a thermal pad or heat sink to ensure efficient heat dissipation.
  • The NDF10N60ZG has an internal ESD protection diode, but additional external protection may be necessary depending on the application. It is recommended to use a TVS (transient voltage suppressor) diode or a Zener diode in parallel with the device to protect against electrostatic discharge (ESD) and overvoltage events.
  • The NDF10N60ZG is a high-reliability device with a typical lifespan of 10-15 years or more, depending on the application and operating conditions. The device is designed to meet the requirements of AEC-Q101, which ensures high reliability and robustness in automotive and industrial applications.

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