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NDF10N60ZH - onsemi

Description: Obsolete - Power MOSFET 620V 5.7A 750 mOhm Single N-Channel TO220FP

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PCB Footprints
NDF10N60ZH - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 FULLPAK CASE 221AH ISSUE F
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3D Models
NDF10N60ZH - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 FULLPAK CASE 221AH ISSUE F
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NDF10N60ZH Details

  • Manufacturer Part Number:

    NDF10N60ZH

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220 FULLPACK, 3-LEAD

  • Package Description:

    FULL PACK-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    221AH

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    300 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.75 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    39 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

NDF10N60ZH Frequently Asked Questions (FAQs)

  • The maximum SOA for the NDF10N60ZH is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be determined by plotting the device's voltage and current ratings against each other, taking into account the thermal limitations.
  • To minimize switching losses, ensure that the gate drive voltage is sufficient (typically 10-15V) and the gate resistance is low (typically <10 ohms). Also, consider using a gate driver IC or a dedicated gate drive circuit to provide a fast rise and fall time (<10ns) and a high current capability (>1A).
  • For optimal thermal performance, use a multi-layer PCB with a solid ground plane and a thermal relief pattern under the device. Ensure good thermal conductivity by using a thermal interface material (TIM) and a heat sink with a low thermal resistance. Keep the PCB traces short and wide to minimize inductance and resistance.
  • Handle the device by the body or use an anti-static wrist strap to prevent ESD damage. Use an ESD-protected workstation and ensure that all tools and equipment are grounded. Consider adding ESD protection devices, such as TVS diodes or ESD arrays, to the PCB design.
  • The NDF10N60ZH is a high-reliability device with a typical lifetime of 10-20 years, depending on the application and operating conditions. Follow the recommended operating conditions, derating, and storage guidelines to ensure maximum reliability and lifetime.

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NDF10N60ZH Overview

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