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NDF11N50ZG - onsemi

Description: Obsolete - Power MOSFET 500V 10.5A 0.52 Ohm Single N-Channel TO-220FP

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PCB Footprints
NDF11N50ZG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 FULLPAK CASE 221AH ISSUE F
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3D Models
NDF11N50ZG - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 FULLPAK CASE 221AH ISSUE F
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NDF11N50ZG Details

  • Manufacturer Part Number:

    NDF11N50ZG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220 3 LEAD FULLPAK

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, CASE 221D-03, TO-220FP, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221AH

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    420 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    6.7 A

  • Drain-source On Resistance-Max:

    0.52 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    39 W

  • Pulsed Drain Current-Max (IDM):

    42 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

NDF11N50ZG Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NDF11N50ZG is -55°C to 150°C.
  • To ensure proper biasing, the NDF11N50ZG requires a gate-source voltage (Vgs) between 2V and 10V, and a drain-source voltage (Vds) between 10V and 500V.
  • The recommended gate resistor value for the NDF11N50ZG is between 1kΩ and 10kΩ, depending on the specific application and switching frequency.
  • Yes, the NDF11N50ZG is suitable for high-frequency switching applications up to 1MHz, but the user should ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • To protect the NDF11N50ZG from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) diode, and consider adding a current sense resistor and a fuse or a current limiter.

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NDF11N50ZG Overview

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