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NDP6060 - onsemi

Description: High density cell design for extremely low RDS(ON).; Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.; TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.; Critical DC electrical parameters specified at elevated temperature.; 175°C maximum junction temperature rating.; 48A, 60V. RDS(ON) = 0.025Ω@ VGS=10V.

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PCB Footprints
NDP6060 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220−3LD CASE 340AT_2024
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3D Models
NDP6060 - onsemi  - 3D model - Transistor Outline, Vertical - TO−220−3LD CASE 340AT_2024
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NDP6060 Details

  • Manufacturer Part Number:

    NDP6060

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.15

  • Avalanche Energy Rating (Eas):

    200 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    48 A

  • Drain-source On Resistance-Max:

    0.025 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    100 W

  • Pulsed Drain Current-Max (IDM):

    144 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NDP6060 Frequently Asked Questions (FAQs)

  • A good PCB layout for the NDP6060 involves keeping the input and output traces separate, using a solid ground plane, and placing the device close to the power source. Additionally, using a shielded inductor and placing it close to the device can help reduce EMI.
  • When choosing an inductor for the NDP6060, consider the inductor's saturation current, DC resistance, and core material. A good starting point is to use an inductor with a saturation current of at least 2x the peak current, a DC resistance of <100mΩ, and a ferrite or iron powder core.
  • The maximum ambient temperature for the NDP6060 is 85°C, but it's recommended to derate the device's power handling at higher temperatures to ensure reliable operation.
  • Yes, the NDP6060 can be used in a synchronous rectification configuration, but it requires additional external components and careful design to ensure proper operation.
  • To troubleshoot issues with the NDP6060, start by checking the input voltage, output voltage, and current. Verify that the device is properly soldered and that the PCB layout is correct. Check for signs of overheating, such as excessive temperature or thermal shutdown. Consult the datasheet and application notes for guidance on troubleshooting specific issues.

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NDP6060 Overview

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Part Image NDP6060/J69Z Texas Instruments

48A, 60V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN