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NDP6060L - onsemi

Description: TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.; 48A, 60V. RDS(ON) = 0.025Ω @ VGS = 5V.; High density cell design for extremely low RDS(ON).; Critical DC electrical parameters specified at elevated temperature.; 175°C maximum junction temperature rating.; Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V.; Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

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PCB Footprints
NDP6060L - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 (FS PKG Code 37)
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3D Models
NDP6060L - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 (FS PKG Code 37)
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NDP6060L Details

  • Manufacturer Part Number:

    NDP6060L

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.15

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    200 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    48 A

  • Drain-source On Resistance-Max:

    0.025 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    100 W

  • Pulsed Drain Current-Max (IDM):

    144 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NDP6060L Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's current handling capability at high temperatures.
  • The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage.
  • Yes, but be aware of the device's switching characteristics and ensure that the switching frequency is within the recommended range (typically up to 100 kHz). Also, consider the impact of switching losses on the device's thermal performance.
  • Use ESD protection devices, such as TVS diodes or ESD protection arrays, on the input and output pins. Also, follow proper handling and storage procedures to prevent ESD damage.

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NDP6060L Overview

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Part Image NDP6060L Texas Instruments

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Part Image NDP6060L/J69Z Texas Instruments

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Part Image NDP6060LJ69Z Fairchild Semiconductor Corporation

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