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NDS0610 - onsemi

Description: Voltage controlled p-channel small signal switch; High saturation current; High density cell design for low RDS(ON); -0.12 A, -60 V. RDS(ON) = 10 Ω @ VGS = -10 V RDS(ON) = 20 Ω @ VGS = -4.5 V

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NDS0610 - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - NDS0610
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NDS0610 - onsemi  - 3D model - SOT23 (3-Pin) - NDS0610
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NDS0610 Details

  • Manufacturer Part Number:

    NDS0610

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

  • Package Description:

    SOT-23, 3 PIN

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.12 A

  • Drain-source On Resistance-Max:

    10 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.36 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NDS0610 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NDS0610 is -40°C to 150°C.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended biasing voltage is 10V to 15V.
  • The maximum current rating for the NDS0610 is 6A.
  • To protect the NDS0610 from ESD, handle the device by the body, use an anti-static wrist strap, and store the device in an anti-static bag or container.
  • The recommended PCB layout for the NDS0610 includes a solid ground plane, short and wide traces for the drain and source pins, and a decoupling capacitor between the drain and source pins.

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NDS0610 Overview

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Part Image NDS0610D87Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NDS0610L99Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image TP0610TT2 Temic Semiconductors

Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

Part Image TP0610T Temic Semiconductors

Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

Part Image TP0610T Supertex Inc

Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

For a full list of alternate parts for NDS0610, check out Findchips.com