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NDS8434 - onsemi

Description: Obsolete - Dual N & P-Channel Enhancement Mode Field Effect Transistor 30V

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NDS8434 Details

  • Manufacturer Part Number:

    NDS8434

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Package Description:

    SOIC-8

  • Manufacturer Package Code:

    751EB

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    6.5 A

  • Drain-source On Resistance-Max:

    0.035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NDS8434 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor junction temperature and adjust the system design accordingly.
  • Focus on minimizing parasitic inductance, using a common-mode choke, and adding EMI filters. Ensure proper PCB layout, decoupling, and shielding to reduce radiated emissions.
  • Use a dedicated gate driver IC, ensure a low-impedance gate drive circuit, and optimize the gate resistance and capacitance for minimal power loss and EMI.
  • Ensure identical devices, matching thermal performance, and synchronized gate drive signals. Implement a master-slave configuration, and consider using a current-sharing bus to balance current distribution.

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NDS8434 Overview

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Part Image NDS8434 Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 6.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET