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NDS9948 - onsemi

Description: High power and current handling capability; High performance trench technology for extremelylow RDS(ON); -2.3A, -60V; RDS(ON) = 250 mΩ @ VGS = -10V; Fast switching speed; Low gate charge (9nC typical); RDS(ON) = 500 mΩ @ VGS = -4.5V

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NDS9948 - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC8 CASE 751EB ISSUE A-3
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NDS9948 - onsemi  - 3D model - Small Outline Packages - SOIC8 CASE 751EB ISSUE A-3
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NDS9948 Details

  • Manufacturer Part Number:

    NDS9948

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8

  • Package Description:

    SOP-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    15 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    2.3 A

  • Drain-source On Resistance-Max:

    0.25 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    10 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NDS9948 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane, wide power traces, and thermal vias under the package can help reduce EMI and thermal issues. Refer to onsemi's application note AND9394/D for more details.
  • To optimize performance, ensure a low-ESR output capacitor, minimize PCB trace inductance, and use a high-frequency capable inductor. Additionally, adjust the switching frequency and dead-time to minimize losses and ringing.
  • Ensure good thermal contact between the device and heat sink, use a heat sink with a high thermal conductivity, and provide adequate airflow. Monitor the junction temperature (TJ) and adjust the design accordingly to prevent overheating.
  • Use a voltage supervisor or a dedicated overvoltage protection (OVP) circuit to detect and respond to voltage faults. Implement undervoltage lockout (UVLO) to prevent the device from operating outside its specified voltage range.
  • Use low-ESR, high-frequency capable capacitors (e.g., X7R or X5R dielectrics) with a minimum capacitance of 10uF for the input and output capacitors. Ensure the capacitors are rated for the maximum operating voltage and temperature range.

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Part Image NDS9948_NL Fairchild Semiconductor Corporation

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Part Image NDS9948X Texas Instruments

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