Part Image

NDT451AN - onsemi

Description: 7.2A, 30V RDS(ON) = 0.035Ω @ VGS = 10V RDS(ON) = 0.05Ω @ VGS = 4.5V; High power and current handling capability in a widely used surface mount package; High density cell design for extremely low RDS(ON)

Download NDT451AN Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NDT451AN - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT−223 CASE 318H ISSUE B
click to zoom
3D Models
NDT451AN - onsemi  - 3D model - SOT223 (3-Pin) - SOT−223 CASE 318H ISSUE B
click to zoom

NDT451AN Details

  • Manufacturer Part Number:

    NDT451AN

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-223-4 / TO-261-4

  • Package Description:

    SOT-223, 4 PIN

  • Manufacturer Package Code:

    318H-01

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Additional Feature:

    FAST SWITCHING

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    7.2 A

  • Drain-source On Resistance-Max:

    0.035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3 W

  • Pulsed Drain Current-Max (IDM):

    25 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NDT451AN Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. Ensure a minimum of 1 oz copper thickness and a thermal via array under the device to dissipate heat efficiently.
  • Monitor the device's junction temperature, voltage, and current to prevent overheating, overvoltage, and overcurrent. Implement thermal monitoring and protection circuits to prevent damage.
  • A gate drive circuit with a high-current, low-impedance design is recommended. Use a dedicated gate driver IC or a discrete transistor-based design with a low impedance output stage.
  • Use a shielded enclosure, keep the device and PCB layout compact, and minimize loop areas. Implement EMI filtering, such as a common-mode choke and capacitors, to reduce emissions.
  • For high-power applications, consider using a heat sink with a thermal interface material (TIM) and a fan for forced air cooling. Ensure good thermal contact between the device and heat sink.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NDT451AN Overview

Use the download button to access the NDT451AN schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like NDT45, or try a keyword search, such as Power Field-Effect Transistors

Parts related to NDT451AN

Showing 0 results

NDT451AN Alternates

Showing results

Image Part Number Model
Part Image NDT451AN Rochester Electronics LLC

7.2A, 30V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN

Part Image NDT451AN_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 7.2A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET