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NDT452AP - onsemi

Description: High power and current handling capability in a widely used surface mount package; -5A, -30V. RDS(ON) = 0.065 Ω @ VGS = -10V RDS(ON) = 0.1 Ω @ VGS = -4.5V ; High density cell design for extremely low RDS(ON)

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PCB Footprints
NDT452AP - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT-223 CASE 318H
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3D Models
NDT452AP - onsemi  - 3D model - SOT223 (3-Pin) - SOT-223 CASE 318H
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NDT452AP Details

  • Manufacturer Part Number:

    NDT452AP

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-223-4 / TO-261-4

  • Manufacturer Package Code:

    318H-01

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.32

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    0.065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -65 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    3 W

  • Pulsed Drain Current-Max (IDM):

    15 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NDT452AP Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature and adjust the system accordingly.
  • A 10uF to 22uF X7R or X5R ceramic capacitor is recommended, placed as close to the device as possible. This ensures stable operation and minimizes noise.
  • Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits. Use a voltage supervisor or a dedicated OVP IC, and consider adding a fuse or a PTC resettable fuse for OCP.
  • Use wide, low-impedance traces (at least 50 mils wide) for the high-current paths. Avoid sharp corners and use rounded traces to minimize inductance. Keep the traces as short as possible and use multiple vias to reduce resistance.

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NDT452AP Overview

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Part Image NDT452AP Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 5A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET