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NDT454P - onsemi

Description: Last Shipments - N-Channel Power MOSFET 1500V, 2.5A, 10.5Ω

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PCB Footprints
NDT454P - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT-223 CASE 318H
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3D Models
NDT454P - onsemi  - 3D model - SOT223 (3-Pin) - SOT-223 CASE 318H
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NDT454P Details

  • Manufacturer Part Number:

    NDT454P

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-223-4 / TO-261-4

  • Manufacturer Package Code:

    318H-01

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    5.9 A

  • Drain-source On Resistance-Max:

    0.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    3 W

  • Pulsed Drain Current-Max (IDM):

    15 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NDT454P Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • To ensure stability, a minimum output capacitance of 10uF is recommended, and the output voltage should be decoupled with a 1uF ceramic capacitor.
  • The maximum SOA for NDT454P is defined by the voltage and current ratings. The device should not be operated beyond 40V and 4A to prevent damage.
  • Yes, NDT454P is rated for operation up to 150°C junction temperature. However, the device's performance and reliability may degrade at high temperatures, so proper thermal management is crucial.
  • A transient voltage suppressor (TVS) can be used to protect the device from overvoltage, and a fuse or current limiter can be used to prevent overcurrent.

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NDT454P Overview

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Part Image NDT454P Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 5.9A I(D), 30V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET