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NDT456P - onsemi

Description: -7.5 A, -30 V RDS(ON) = 0.030 Ω @ VGS = -10 V RDS(ON) = 0.045 Ω @ VGS = -4.5 V ; High density cell design for extremely low RDS(ON) ; High power and current handling capability in a widely used surface mount package

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PCB Footprints
NDT456P - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT  233
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3D Models
NDT456P - onsemi  - 3D model - SOT223 (3-Pin) - SOT  233
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NDT456P Details

  • Manufacturer Part Number:

    NDT456P

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-223-4 / TO-261-4

  • Manufacturer Package Code:

    318H-01

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    7.5 A

  • Drain-source On Resistance-Max:

    0.03 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    3 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NDT456P Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended. Additionally, vias should be placed under the package to connect the thermal pad to the copper area.
  • Ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended PCB layout. Also, consider derating the device's current and voltage ratings at high temperatures to prevent overheating.
  • The maximum allowed voltage transient on the input pins is ±20V, but it's recommended to limit transients to ±10V to ensure reliable operation and prevent damage to the device.
  • Yes, the NDT456P is qualified for automotive and high-reliability applications. However, it's essential to follow the recommended operating conditions, and onsemi provides additional documentation and support for these applications.
  • Use ESD protection devices, such as TVS diodes, on the input and output pins to prevent damage from electrostatic discharge. Follow the recommended PCB layout and handling procedures to minimize ESD risks.

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NDT456P Overview

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Part Image NDT456P Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 7.5A I(D), 30V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET