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NE5517DR2G - onsemi

Description: Constant Impedance Buffers; Delta VBE of Buffer is Constant with Amplifier Ibias Change; Excellent Matching Between Amplifiers; Linearizing Diodes; High Output Signal-to-Noise Ratio

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NE5517DR2G - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC-16 CASE751B-05
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NE5517DR2G - onsemi  - 3D model - Small Outline Packages - SOIC-16 CASE751B-05
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NE5517DR2G Details

  • Manufacturer Part Number:

    NE5517DR2G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC 16 LEAD

  • Pin Count:

    16

  • Manufacturer Package Code:

    751B-05

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.33.00.01

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4.15

  • Amplifier Type:

    OPERATIONAL AMPLIFIER

  • Architecture:

    TRANSCONDUCTANCE

  • Average Bias Current-Max (IIB):

    8 µA

  • Bias Current-Max (IIB) @25C:

    5 µA

  • Common-mode Reject Ratio-Nom:

    110 dB

  • Frequency Compensation:

    YES

  • Input Offset Voltage-Max:

    5000 µV

  • JESD-30 Code:

    R-PDSO-G16

  • JESD-609 Code:

    e3

  • Length:

    9.9 mm

  • Low-Offset:

    NO

  • Moisture Sensitivity Level:

    1

  • Neg Supply Voltage Limit-Max:

    -22 V

  • Neg Supply Voltage-Nom (Vsup):

    -15 V

  • Number of Functions:

    2

  • Number of Terminals:

    16

  • Operating Temperature-Max:

    70 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SOP

  • Package Equivalence Code:

    SOP16,.25

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TAPE AND REEL

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    1.75 mm

  • Slew Rate-Nom:

    50 V/us

  • Supply Current-Max:

    4 mA

  • Supply Voltage Limit-Max:

    22 V

  • Supply Voltage-Nom (Vsup):

    15 V

  • Surface Mount:

    YES

  • Technology:

    BIPOLAR

  • Temperature Grade:

    COMMERCIAL

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Unity Gain BW-Nom:

    2000

  • Width:

    3.9 mm

NE5517DR2G Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the NE5517DR2G is 3.0V to 5.5V.
  • To ensure stability, make sure to decouple the power supply pins (VCC and GND) with a 10uF capacitor, and use a 1uF capacitor between the output pin (OUT) and the inverting input pin (IN-).
  • The maximum power dissipation of the NE5517DR2G is 500mW.
  • Yes, the NE5517DR2G can be used as a comparator by connecting the inverting input (IN-) to a reference voltage and the non-inverting input (IN+) to the signal to be compared.
  • To reduce noise and oscillations, use a low-pass filter at the input, and ensure that the layout is well-designed with short leads and minimal parasitic capacitance.

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NE5517DR2G Overview

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