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NGTB15N120IHLWG - onsemi

Description: Obsolete - IGBT 1200V 15A FS2-RC Induction Heating

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PCB Footprints
NGTB15N120IHLWG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 CASE 340L-02
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3D Models
NGTB15N120IHLWG - onsemi  - 3D model - Transistor Outline, Vertical - TO-247 CASE 340L-02
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NGTB15N120IHLWG Details

  • Manufacturer Part Number:

    NGTB15N120IHLWG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247

  • Pin Count:

    3

  • Manufacturer Package Code:

    340L-02

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    30 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    156 W

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    440 ns

NGTB15N120IHLWG Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the NGTB15N120IHLWG is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material (TIM) between the device and the heat sink. The heat sink should be designed to dissipate the maximum power dissipation of the device, and the TIM should have a thermal conductivity of at least 5 W/m-K.
  • The recommended gate drive voltage for the NGTB15N120IHLWG is between 10 V and 15 V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
  • To protect the NGTB15N120IHLWG from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, a current sense resistor and a fuse or a current limiter can be used to detect and respond to overcurrent conditions.
  • The recommended PCB layout and routing for the NGTB15N120IHLWG involves using a multi-layer PCB with a solid ground plane, and routing the high-frequency signals away from the device. It's also recommended to use a Kelvin connection for the gate drive and to minimize the loop inductance of the power stage.

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