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NGTB40N120FL3WG - onsemi

Description: Extremely Efficient Trench with Ultra Field Stop Technology; TJmax = 175°C; Soft Fast Reverse Recovery Diode; Optimized for High Speed Switching; These are Pb−Free Devices

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NGTB40N120FL3WG - onsemi - PCB symbol
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PCB Footprints
NGTB40N120FL3WG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247
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3D Models
NGTB40N120FL3WG - onsemi - 3D model - Transistor Outline, Vertical - TO−247
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NGTB40N120FL3WG Details

  • Manufacturer Part Number:

    NGTB40N120FL3WG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247

  • Manufacturer Package Code:

    340AM

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    29 Weeks

  • Date Of Intro:

    2016-03-25

  • Manufacturer:

    onsemi

  • YTEOL:

    5.35

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    454 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    326 ns

  • Turn-on Time-Nom (ton):

    51 ns

  • VCEsat-Max:

    1.95 V

NGTB40N120FL3WG Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the NGTB40N120FL3WG is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. The heat sink should be attached to the device using a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate drive voltage for the NGTB40N120FL3WG is between 10V and 15V. A higher gate drive voltage can reduce switching losses, but may also increase the risk of gate oxide breakdown. A lower gate drive voltage can reduce the risk of gate oxide breakdown, but may increase switching losses.
  • To protect the NGTB40N120FL3WG from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, use a current sense resistor and a fuse or a current limiter to detect and respond to overcurrent conditions.
  • To minimize electromagnetic interference (EMI) and ensure reliable operation, use a multi-layer PCB with a solid ground plane and a separate power plane. Keep the power traces short and wide, and use decoupling capacitors to filter the power supply. Keep the gate drive traces short and away from the power traces to minimize noise coupling.

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NGTB40N120FL3WG Overview

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