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NGTB40N120L3WG - onsemi

Description: Extremely Efficient Trench with Ultra Field Stop Technology; TJmax = 175°C; Soft Fast Reverse Recovery Diode; Optimized for Low VCEsat; These are Pb−Free Devices

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NGTB40N120L3WG - onsemi - PCB symbol
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PCB Footprints
NGTB40N120L3WG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247 CASE 340AL ISSUE D
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3D Models
NGTB40N120L3WG - onsemi - 3D model - Transistor Outline, Vertical - TO−247 CASE 340AL ISSUE D
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NGTB40N120L3WG Details

  • Manufacturer Part Number:

    NGTB40N120L3WG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247

  • Manufacturer Package Code:

    340AM

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2016-03-25

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    RC-IGBT

  • Collector Current-Max (IC):

    160 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    454 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    376 ns

  • Turn-on Time-Nom (ton):

    49 ns

  • VCEsat-Max:

    1.8 V

NGTB40N120L3WG Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the NGTB40N120L3WG is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. The heat sink should be attached to the device using a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate drive voltage for the NGTB40N120L3WG is between 10V and 15V. A higher gate drive voltage can improve switching performance, but may also increase power consumption and EMI emissions.
  • Yes, the NGTB40N120L3WG can be used in a parallel configuration to increase current handling capability. However, it's essential to ensure that the devices are matched in terms of threshold voltage and transconductance to prevent uneven current sharing and potential oscillations.
  • The maximum allowed dv/dt for the NGTB40N120L3WG is 10 kV/μs. Exceeding this limit can cause the device to malfunction or fail. It's essential to ensure that the device is properly snubbed and that the gate drive circuit is designed to limit dv/dt to a safe value.

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NGTB40N120L3WG Overview

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