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NGTB40N120S3WG - onsemi

Description: Obsolete - IGBT, 1200V/40A - Welding

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PCB Footprints
NGTB40N120S3WG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247 CASE 340AL ISSUE D
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3D Models
NGTB40N120S3WG - onsemi  - 3D model - Transistor Outline, Vertical - TO−247 CASE 340AL ISSUE D
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NGTB40N120S3WG Details

  • Manufacturer Part Number:

    NGTB40N120S3WG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247-3

  • Manufacturer Package Code:

    340AL

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    160 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    454 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • VCEsat-Max:

    1.95 V

NGTB40N120S3WG Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the NGTB40N120S3WG is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) to the device's exposed thermal pad, and ensure the heat sink is securely fastened to the device. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate drive voltage for the NGTB40N120S3WG is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's essential to consult the datasheet and application notes for more information.
  • Yes, the NGTB40N120S3WG is suitable for high-reliability applications. onsemi provides a range of reliability data, including FIT (Failure In Time) rates, to support the use of this device in demanding applications. However, it's essential to follow proper design, manufacturing, and testing procedures to ensure the device meets the required reliability standards.
  • To protect the NGTB40N120S3WG from overvoltage and overcurrent, it's essential to implement proper protection circuits, such as overvoltage protection (OVP) and overcurrent protection (OCP) mechanisms. These can include devices like voltage regulators, current sensors, and protection ICs. Additionally, ensure the device is operated within its specified ratings and follow proper PCB design and layout practices.

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NGTB40N120S3WG Overview

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