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NIS6452MT1TWG - onsemi

Description: Fast Response Overvoltage Clamp Circuit; Digital and Tristate Enable; 42 mΩ Typical; Integrated Reverse Current Protection; Thermally Protected; Integrated Soft−Start Circuit; Internal Undervoltage Lockout Circuit

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PCB Footprints
NIS6452MT1TWG - onsemi PCB footprint - Other - Other - WQFN12
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NIS6452MT1TWG - onsemi  - 3D model - Other - WQFN12
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NIS6452MT1TWG Details

  • Manufacturer Part Number:

    NIS6452MT1TWG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WQFN-12

  • Package Description:

    WQFN-12

  • Manufacturer Package Code:

    510BM

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Adjustable Threshold:

    NO

  • Analog IC - Other Type:

    eFUSE

  • JESD-30 Code:

    R-XQCC-N12

  • JESD-609 Code:

    e4

  • Length:

    3 mm

  • Moisture Sensitivity Level:

    1

  • Number of Channels:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    12

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Code:

    HVQCCN

  • Package Equivalence Code:

    LCC12,.08X.12,20

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

  • Peak Reflow Temperature (Cel):

    260

  • Seated Height-Max:

    0.8 mm

  • Supply Voltage-Nom (Vsup):

    5 V

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

  • Terminal Form:

    NO LEAD

  • Terminal Pitch:

    0.5 mm

  • Terminal Position:

    QUAD

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Width:

    2 mm

NIS6452MT1TWG Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the device and to connect it to a thermal plane or a heat sink.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, provide adequate heat sinking, and use a thermal interface material (TIM) with a high thermal conductivity. Additionally, consider using a thermistor or a temperature sensor to monitor the device temperature and implement thermal protection mechanisms if necessary.
  • The NIS6452MT1TWG has built-in ESD protection diodes on all pins, which can withstand up to 2 kV of electrostatic discharge according to the Human Body Model (HBM). To prevent latch-up, it's recommended to follow proper PCB design guidelines, use a ground plane, and avoid voltage spikes or transients on the power supply lines.
  • Yes, the NIS6452MT1TWG is suitable for high-reliability and automotive applications. It's manufactured using a robust process, and onsemi provides a range of reliability and quality data, including AEC-Q100 qualification, to support its use in demanding environments.
  • To troubleshoot issues with the NIS6452MT1TWG, start by reviewing the device's operating conditions, power supply, and PCB layout. Check for any signs of overheating, electrical overstress, or ESD damage. Use oscilloscopes or logic analyzers to monitor the device's signals and identify any anomalies. Consult the datasheet and application notes for guidance on troubleshooting and debugging techniques.

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NIS6452MT1TWG Overview

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