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NJT4030PT1G - onsemi

Description: Low Collector-Emitter Saturation Voltage; High DC Current Gain; High Current-Gain Bandwidth Product; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

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PCB Footprints
NJT4030PT1G - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT−223
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NJT4030PT1G - onsemi  - 3D model - SOT223 (3-Pin) - SOT−223
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NJT4030PT1G Details

  • Manufacturer Part Number:

    NJT4030PT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-223 (TO-261) 4 LEAD

  • Package Description:

    TO-261, 4 PIN

  • Pin Count:

    4

  • Manufacturer Package Code:

    0.0318

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    3 A

  • Collector-Emitter Voltage-Max:

    40 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    100

  • JEDEC-95 Code:

    TO-261AA

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    160 MHz

NJT4030PT1G Frequently Asked Questions (FAQs)

  • A good PCB layout for NJT4030PT1G involves keeping the input and output traces short and separate, using a solid ground plane, and placing decoupling capacitors close to the device. A 4-layer PCB with a dedicated power plane and a solid ground plane is recommended.
  • To ensure stability, it's essential to use a suitable output capacitor with a low ESR (Equivalent Series Resistance) and a high ripple current rating. A minimum output capacitance of 10uF is recommended, and the capacitor should be placed close to the device.
  • The maximum ambient temperature range for NJT4030PT1G is -40°C to +125°C. However, the device's performance and reliability may degrade if operated at extreme temperatures for an extended period.
  • Yes, NJT4030PT1G is suitable for high-reliability applications. It's manufactured using a proprietary BiCMOS process and has undergone rigorous testing to ensure its reliability and performance. However, it's essential to follow proper design and manufacturing guidelines to ensure the device's reliability.
  • To protect NJT4030PT1G from overvoltage and undervoltage conditions, it's recommended to use a voltage supervisor or a reset IC that can detect and respond to voltage faults. Additionally, using a TVS (Transient Voltage Suppressor) diode or a voltage clamp can help protect the device from voltage transients.

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NJT4030PT1G Overview

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Part Image NJT4030PT3G onsemi

Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin