Description:Complementary Pairs Simplifies Designs; Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes; Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix); Electrically Similar to Popular D44H/D45H Series; Fast Switching Speeds; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
The recommended PCB footprint for the NJVMJD45H11RLG is a standard SOT-223 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
To ensure proper thermal management, use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and ensure the MOSFET is mounted on a heat sink with a thermal resistance of less than 10°C/W.
The maximum allowed voltage for the NJVMJD45H11RLG's gate-source voltage (Vgs) is ±20V, but it's recommended to keep it between -5V and +15V for reliable operation.
Yes, the NJVMJD45H11RLG is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
Handle the NJVMJD45H11RLG with ESD-protective equipment, and ensure the PCB has ESD protection circuits, such as TVS diodes or ESD protection arrays, to prevent damage from static electricity.
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NJVMJD45H11RLG Overview
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