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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 Complementary Pairs Simplifies Designs; Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes; Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix); Electrically Similar to Popular D44H/D45H Series; Fast Switching Speeds; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Other NJVMJD45H11T4G 1 Download Model
Part Image Part Image 1 ON SEMICONDUCTOR - NJVMJD122T4G-VF01 - TRANS, AEC-Q101, NPN, 100V, TO-252-3 Other NJVMJD122T4G-VF01 1 Download Model
Part Image Part Image 1 Bipolar Transistors - BJT BIP NPN 8A 80V TR Other NJVMJD44H11RLG-VF01 1 Download Model
Part Image Part Image 1 Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 4MHz 1.75 W Surface Mount DPAK Other NJVMJD122T4G 1 Download Model
Part Image Part Image 1 Straight Lead Version in Plastic Sleeves (-1 Suffix); Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Electrically Similar to Popular MJE340 and MJE350; 300 V (Min) VCEO(sus); Lead Formed Version in 16 mm Tape and Reel (T4 Suffix); 0.5 A Rated Collector Current; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free and are RoHS Compliant Other NJVMJD340T4G 1 Download Model
Part Image Part Image 1 Bipolar (BJT) Transistor NPN 60 V 10 A 2MHz 1.75 W Surface Mount DPAK , 10 A , 60 V , -55°C ~ 150°C (TJ) Other NJVMJD3055T4G 1 Download Model
Part Image Part Image 1 ON SEMICONDUCTOR - NJVMJD31CT4G-VF01 - TRANSISTOR, NPN, 100V, 3A, TO-252-3 Other NJVMJD31CT4G-VF01 1 Download Model
Part Image Part Image 1 Complementary Pairs Simplifies Designs; Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes; Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix); Electrically Similar to Popular D44H/D45H Series; Fast Switching Speeds; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Other NJVMJD44H11G 1 Download Model
Part Image Part Image 1 Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Lead Formed Version in 16 mm Tape and Reel ("T4G" Suffix); Electrically Similar to Popular TIP31 and TIP32 Series; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant Other NJVMJD32CT4G 1 Download Model
Part Image Part Image 1 Bipolar Transistors - BJT BIP DPAK PNP 4A 100V TR , 600mV , 12.5W , 40MHz , -65C ~ +150C Other NJVMJD253T4G 1 Download Model
Part Image Part Image 1 Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 V (Max) @ 8.0 A; Fast Switching Speeds; Complementary Pairs Simplifies Designs; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; PbFree Packages are Available Other NJVMJB45H11T4G 1 Download Model
Part Image Part Image 1 Electrically Similar to Popular TIP47, and TIP50; Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix); Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); 250 and 400 V (Min) VCEO(sus); 1 A Rated Collector Current; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free and are RoHS Compliant Other NJVMJD50T4G 1 Download Model
Part Image Part Image 1 Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); DC Current Gain Specified to 10 Amperes; Straight Lead Version in Plastic Sleeves ("-1" Suffix); Electrically Similar to MJE2955 and MJE3055; Lead Formed Version Available in 16 mm Tape and Reel ("T4" Suffix); High Current Gain-Bandwidth Product fT = 2.0 MHz (Min) @ IC = 500 mAdc; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These are PbFr Other NJVMJD2955T4G 1 Download Model
Part Image Part Image 1 Bipolar (BJT) Transistor PNP 100 V 3 A 3MHz 1.56 W Surface Mount DPAK Other NJVMJD32CG 1 Download Model
Part Image Part Image 1 NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; Complementary NPN: MJK31C Other NJVMJK31CTWG 1 Download Model
Part Image Part Image 1 Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc; Surface Mount Replacements for 2N6040-2N6045 Series, TIP120-TIP122 Series, and TIP125-TIP127 Series; Monolithic Construction With Built-in Base-Emitter Shunt Resistors; Lead Formed Version Available in 16 mm Tape and Reel ("T4" Suffix); Complementary Pairs Simplifies Designs; NJV Prefix for Automotive and Other Applications R Other NJVMJD127T4G 1 Download Model
Part Image Part Image 1 Ultra−slim LFPAK4 Package (5 x 6 mm) with Wettable Flanks; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free and are RoHS Compliant Other NJVMJK45H11TWG 1 Download Model
Part Image Part Image 1 Bipolar Transistors - BJT BIP PNP 8A 80V TR Other NJVMJD45H11T4G-VF01 1 Download Model
Part Image Part Image 1 Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Lead Formed Version in 16 mm Tape & Reel ("T4" Suffix); Electrically the Same as TIP41 and T1P42 Series; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; Pb-Free Packages are Available Other NJVMJB41CT4G 1 Download Model
Part Image Part Image 1 High Current-Gain-Bandwith Product - fT = 40MHz (Min) @ IC = 100 mAdc; Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Collector-Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc; Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Adc; Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix); Straight Lead Version in Plastic Sleeves ("-1" Suffix); High DC Current Gain hFE = 40 (Min) @ IC= 200 mA Other NJVMJD243T4G 1 Download Model
Part Image Part Image 1 Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin NJVMJD253T4G-VF01 0 Build or Request
Part Image Part Image 1 Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("1G"Suffix); Lead Formed Version in 16 mm Tape and Reel ("T4G" Suffix); Electrically Similar to Popular TIP31 and TIP32 Series; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant NJVMJD31CG 1 Download Model
Part Image Part Image 1 Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin NJVMJB42CT4G 0 Build or Request
Part Image Part Image 1 Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin NJVMJD31T4G 1 Download Model
Part Image Part Image 1 MJD200 is the complementary NPN device; High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc; Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB; These Devices are Pb-Free and are RoHS Compliant; Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.30 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc; Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Contro NJVMJD210T4G 1 Download Model
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