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NJVMJD243T4G - onsemi

Description: High Current-Gain-Bandwith Product - fT = 40MHz (Min) @ IC = 100 mAdc; Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Collector-Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc; Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Adc; Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix); Straight Lead Version in Plastic Sleeves ("-1" Suffix); High DC Current Gain hFE = 40 (Min) @ IC= 200 mA

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NJVMJD243T4G - onsemi PCB footprint - Other - Other - DPAK−3 CASE 369C STYLE 1
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NJVMJD243T4G Details

  • Manufacturer Part Number:

    NJVMJD243T4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Vietnam

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    4 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    15

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -65 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    12.5 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    40 MHz

NJVMJD243T4G Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the NJVMJD243T4G is a standard SOT-223 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • To ensure proper thermal management, ensure a good thermal interface between the device and the heat sink, use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and design the heat sink to have a thermal resistance of less than 10°C/W.
  • The maximum allowed voltage on the gate of the NJVMJD243T4G is ±20V, with a recommended maximum of ±15V for reliable operation.
  • To protect the NJVMJD243T4G from ESD, handle the device with an ESD wrist strap or mat, use ESD-safe packaging and storage, and ensure that the device is not exposed to ESD-sensitive areas.
  • The recommended gate drive voltage for the NJVMJD243T4G is between 4.5V and 15V, with a recommended minimum of 10V for reliable turn-on and turn-off.

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NJVMJD243T4G Overview

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