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NJVMJD122T4G - onsemi

Description: Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 4MHz 1.75 W Surface Mount DPAK

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NJVMJD122T4G - onsemi PCB footprint - Other - Other - DPAK3 6.10x6.54x2.28, 2.29P CASE 369C ISSUE H_2025
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NJVMJD122T4G Details

  • Manufacturer Part Number:

    NJVMJD122T4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    8 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    100

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -65 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    20 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    4 MHz

NJVMJD122T4G Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the NJVMJD122T4G is a standard SOT-223 package with a minimum pad size of 1.5mm x 1.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • To ensure proper thermal management, ensure a good thermal interface between the device and the heat sink, use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and design the heat sink to have a thermal resistance of less than 10°C/W.
  • The maximum allowed voltage for the NJVMJD122T4G's gate-source voltage (Vgs) is ±20V, but it's recommended to keep it between -5V to +15V for reliable operation.
  • Yes, the NJVMJD122T4G can be used in high-frequency switching applications up to 1 MHz, but ensure proper PCB layout, decoupling, and gate drive design to minimize switching losses and ringing.
  • To protect the NJVMJD122T4G from ESD, handle the device with an ESD wrist strap or mat, use ESD-safe packaging and storage, and ensure the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays.

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NJVMJD122T4G Overview

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