Part Image

NJVMJD122T4G-VF01 - onsemi

Description: ON SEMICONDUCTOR - NJVMJD122T4G-VF01 - TRANS, AEC-Q101, NPN, 100V, TO-252-3

Download NJVMJD122T4G-VF01 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NJVMJD122T4G-VF01 - onsemi PCB footprint - Other - Other - NJVMJD122T4G-VF01-1
click to zoom

NJVMJD122T4G-VF01 Details

  • Manufacturer Part Number:

    NJVMJD122T4G-VF01

  • Brand Name:

    ON Semiconductor

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Vietnam

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2017-01-31

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    8 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    100

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -65 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

NJVMJD122T4G-VF01 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or a heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout guidelines. Also, consider derating the device's power handling at high temperatures.
  • Handle the device with an anti-static wrist strap or mat. Use ESD-sensitive handling procedures, and ensure the device is stored in an anti-static bag or container.
  • Yes, but ensure you follow the recommended design and qualification guidelines for high-reliability or automotive applications. Consult onsemi's application notes and reliability reports for more information.
  • Use a thermal imaging camera to identify hotspots, and check for proper PCB layout, thermal management, and power handling. Consult onsemi's application notes and technical support resources for troubleshooting guidance.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NJVMJD122T4G-VF01 Overview

Use the download button to access the NJVMJD122T4G-VF01 schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like NJVMJ, or try a keyword search, such as Power Bipolar Transistors

Parts related to NJVMJD122T4G-VF01

Showing 0 results

NJVMJD122T4G-VF01 Alternates

Showing results

Image Part Number Model
Part Image MJD122-TP Micro Commercial Components

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin

Part Image MJD122 Motorola Semiconductor Products

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

Part Image CJD122 Central Semiconductor Corp

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

Part Image MJD122 Fairchild Semiconductor Corporation

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin

Part Image MJD122-T1 Samsung Semiconductor

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

For a full list of alternate parts for NJVMJD122T4G-VF01, check out Findchips.com