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NJVMJB45H11T4G - onsemi

Description: Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 V (Max) @ 8.0 A; Fast Switching Speeds; Complementary Pairs Simplifies Designs; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; PbFree Packages are Available

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NJVMJB45H11T4G - onsemi PCB footprint - Other - Other - D2PAK 3 CASE 418B−04  ISSUE L
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NJVMJB45H11T4G Details

  • Manufacturer Part Number:

    NJVMJB45H11T4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK 2 LEAD

  • Pin Count:

    3

  • Manufacturer Package Code:

    418B-04

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    6 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    10 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    40

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    50 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    40 MHz

NJVMJB45H11T4G Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the NJVMJB45H11T4G is a 5x5mm QFN package with a 0.5mm pitch. A thermal pad is recommended for optimal thermal performance.
  • To ensure proper biasing, the NJVMJB45H11T4G requires a gate-source voltage (Vgs) between 2.5V and 10V. A gate driver or voltage regulator can be used to provide a stable voltage supply.
  • The maximum operating temperature for the NJVMJB45H11T4G is 150°C. However, it's recommended to operate the device at a temperature below 125°C for optimal reliability and performance.
  • To protect the NJVMJB45H11T4G from ESD, handle the device in an ESD-controlled environment, use ESD-protective packaging, and ensure all equipment and tools are properly grounded.
  • The NJVMJB45H11T4G should be stored in a dry, cool place, away from direct sunlight and moisture. The recommended storage temperature is between -40°C and 30°C.

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NJVMJB45H11T4G Overview

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