Part Image

NJVMJD45H11T4G - onsemi

Description: Complementary Pairs Simplifies Designs; Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes; Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix); Electrically Similar to Popular D44H/D45H Series; Fast Switching Speeds; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

Download NJVMJD45H11T4G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NJVMJD45H11T4G - onsemi PCB footprint - Other - Other - DPAK (SINGLE GAUGE) TO-252 (369C) ISSUE F
click to zoom
3D Models
NJVMJD45H11T4G - onsemi  - 3D model - Other - DPAK (SINGLE GAUGE) TO-252 (369C) ISSUE F
click to zoom

NJVMJD45H11T4G Details

  • Manufacturer Part Number:

    NJVMJD45H11T4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    8 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    40

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    20 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    90 MHz

NJVMJD45H11T4G Frequently Asked Questions (FAQs)

  • The maximum input voltage is 45V, but it's recommended to keep it below 40V for reliable operation.
  • To ensure stability, use a minimum output capacitance of 10uF, and keep the ESR (Equivalent Series Resistance) below 1 ohm. Also, place the output capacitor close to the regulator.
  • A minimum input capacitance of 1uF is recommended to ensure stability and reduce input voltage ripple.
  • The NJVMJD45H11T4G is rated for operation up to 150°C. However, the maximum junction temperature (TJ) should not exceed 150°C. Ensure proper heat sinking and thermal management to prevent overheating.
  • Power dissipation (PD) can be calculated using the formula: PD = (VIN - VOUT) x IOUT. Ensure the calculated PD is within the maximum rating of 1.5W.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NJVMJD45H11T4G Overview

Use the download button to access the NJVMJD45H11T4G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like NJVMJ, or try a keyword search, such as Power Bipolar Transistors

Parts related to NJVMJD45H11T4G

Showing 0 results

NJVMJD45H11T4G Alternates

Showing results

Image Part Number Model
Part Image MJD45H11T4G onsemi

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

Part Image MJD45H11 onsemi

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

Part Image NJVMJD45H11RLG-VF01 onsemi

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin