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NP100P06PDG-E1-AY - Renesas Electronics

Description: The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

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NP100P06PDG-E1-AY Details

  • Manufacturer Part Number:

    NP100P06PDG-E1-AY

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    MP-25ZP

  • Package Description:

    TO-263, 3/2 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    PRSS0004AL-A3

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    420 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0078 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    840 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation Ambient-Max:

    1.8 W

  • Power Dissipation-Max (Abs):

    200 W

  • Pulsed Drain Current-Max (IDM):

    300 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NP100P06PDG-E1-AY Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for NP100P06PDG-E1-AY is 1.65V to 3.6V.
  • To ensure the stability of the output voltage, it is recommended to use a capacitor with a value of 1uF or higher between the VOUT and GND pins, and to keep the output voltage pin (VOUT) as close as possible to the load.
  • The maximum output current that NP100P06PDG-E1-AY can provide is 6A.
  • To protect NP100P06PDG-E1-AY from overheating, it is recommended to provide adequate heat sinking, such as a thermal pad or a heat sink, and to ensure good airflow around the device.
  • The EN (Enable) pin is used to enable or disable the output voltage of NP100P06PDG-E1-AY. When the EN pin is high, the output voltage is enabled, and when it is low, the output voltage is disabled.

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NP100P06PDG-E1-AY Overview

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Image Part Number Model
Part Image NP100P06PDG Renesas Electronics Corporation

Power Field-Effect Transistor, 100A I(D), 60V, 0.0078ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image NP100P06PLG-E2-AY Renesas Electronics Corporation

Power Field-Effect Transistor, 100A I(D), 60V, 0.0078ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB