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NP60N06MLK-S18-AY - Renesas Electronics

Description: Support is limited to customers who have already adopted these products.NP60N06MLK is N-channel MOS Field Effect Transistor designed for high current switching applications.

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PCB Footprints
NP60N06MLK-S18-AY - Renesas Electronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220(MP-25K)
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NP60N06MLK-S18-AY - Renesas Electronics  - 3D model - Transistor Outline, Vertical - TO-220(MP-25K)
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NP60N06MLK-S18-AY Details

  • Manufacturer Part Number:

    NP60N06MLK-S18-AY

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    MP-25K

  • Package Description:

    TO-220, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    PRSS0004AN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.0081 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    150 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    1.8 W

  • Power Dissipation-Max (Abs):

    105 W

  • Pulsed Drain Current-Max (IDM):

    240 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    100 ns

  • Turn-on Time-Max (ton):

    60 ns

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