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NRVUA160VT3G - onsemi

Description: Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; High Temperature Glass Passivated Junction; Low Forward Voltage Drop (1.05 Volts Max @ 1.0 A, TJ = 150°C) Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 70 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Shipped in 12 mm Tape and Reel, 5000 uni

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Symbol
NRVUA160VT3G - onsemi - PCB symbol
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PCB Footprints
NRVUA160VT3G - onsemi PCB footprint - Diodes Moulded - Diodes Moulded - NRVBA1H100T3G
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3D Models
NRVUA160VT3G - onsemi - 3D model - Diodes Moulded - NRVBA1H100T3G
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NRVUA160VT3G Details

  • Manufacturer Part Number:

    NRVUA160VT3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SMA-2

  • Manufacturer Package Code:

    403D-02

  • Country Of Origin:

    Mainland China, Vietnam

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    FREE WHEELING DIODE

  • Application:

    HIGH VOLTAGE ULTRA FAST RECOVERY POWER

  • Breakdown Voltage-Min:

    600 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.25 V

  • JESD-30 Code:

    R-PDSO-C2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    30 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    600 V

  • Reverse Current-Max:

    5 µA

  • Reverse Recovery Time-Max:

    0.075 µs

  • Reverse Test Voltage:

    600 V

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

NRVUA160VT3G Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve thermal performance. A minimum of 2 oz copper thickness is recommended for the thermal pad, and it should be connected to a solid ground plane to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C. Also, consider the power dissipation and thermal resistance of the device when designing the system.
  • The NRVUA160VT3G has built-in ESD protection, but it's still important to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is handled in a static-safe environment.
  • Yes, the NRVUA160VT3G is AEC-Q101 qualified, making it suitable for automotive and high-reliability applications. However, ensure that the device is used within the recommended operating conditions and that the system is designed to meet the required reliability standards.
  • The optimal gate resistor value depends on the specific application and switching frequency. A general guideline is to use a resistor value between 10 ohms and 100 ohms. However, it's recommended to consult the application note or contact onsemi support for specific guidance.

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NRVUA160VT3G Overview

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