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NRVUHS160VT3G - onsemi

Description: Ultrafast 35 ns Recovery Times; 175C Operating Junction Temperature; High Temperature Glass Passivated Junction; High Voltage Capability to 600 V Mechanical Characteristics:; Case: Epoxy, Molded; Epoxy Meets UL 94 V0 @ 0.125 in; Weight: 95 mg (Approximately); Finish: All External Surfaces Corrosion Resistant and TerminalLeads are Readily Solderable; Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds; Cathode Polarity Band; SUR Prefix for Automotive and Other Applications Requiring Unique Site

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Image Part Number Model
Part Image MURHS160T3G onsemi

Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 600V V(RRM), Silicon

Part Image SURHS8160T3G onsemi

Rectifier Diode, 1 Phase, 1 Element, 1A, 600V V(RRM), Silicon