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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NRVUHS160VT3G-GA01
onsemi
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1 | Ultrafast 35 Nanosecond Recovery Times• 175°C Operating Junction Temperature• High Temperature Glass Passivated Junction• High Voltage Capability to 600 V• NRVUHS and SURHS8 Prefixes for Automotive and OtherApplications Requiring Unique Site and Control ChangeRequirements; AEC−Q101 Qualified and PPAP Capable• These Devices are Pb−Free and are RoHS Compliant | Diodes Moulded | NRVUHS160VT3G-GA01 |
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NRVUHS160VT3G
onsemi
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1 | Rectifier Diode, 1 Phase, 1 Element, 1A, 600V V(RRM), Silicon | NRVUHS160VT3G |
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