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NSS30100LT1G - onsemi

Description: High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)

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PCB Footprints
NSS30100LT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT−23 (TO−236) CASE 318 ISSUE AT_2023
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3D Models
NSS30100LT1G - onsemi  - 3D model - SOT23 (3-Pin) - SOT−23 (TO−236) CASE 318 ISSUE AT_2023
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NSS30100LT1G Details

  • Manufacturer Part Number:

    NSS30100LT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Package Description:

    CASE 318-08, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Collector Current-Max (IC):

    1 A

  • Collector-Emitter Voltage-Max:

    30 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    40

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.71 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

NSS30100LT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the device can help to dissipate heat efficiently. The datasheet provides a recommended land pattern, but a more detailed layout guide can be found in the onsemi application note AND9173/D.
  • The NSS30100LT1G requires a specific biasing scheme to achieve optimal performance. A recommended biasing circuit is shown in the datasheet, but it's essential to ensure that the voltage and current sources are stable and well-regulated to prevent oscillations or instability.
  • While the datasheet specifies an operating temperature range of -40°C to 125°C, it's essential to note that the device's performance may degrade at higher temperatures. It's recommended to derate the device's power handling capabilities at temperatures above 100°C to ensure reliable operation.
  • The NSS30100LT1G is a sensitive device and requires proper ESD protection during handling and assembly. It's recommended to follow standard ESD precautions, such as using an ESD wrist strap, ESD mat, and ESD-protected packaging and storage.
  • The datasheet provides recommended soldering conditions, but it's essential to note that the device is sensitive to thermal stress. A controlled soldering process with a peak temperature of 260°C and a dwell time of 10-30 seconds is recommended to prevent damage to the device.

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