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NSS40201LT1G - onsemi

Description: High Current, Low VCE(sat), ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta); NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable

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Symbol
NSS40201LT1G - onsemi - PCB symbol
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PCB Footprints
NSS40201LT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08
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3D Models
NSS40201LT1G - onsemi - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08
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NSS40201LT1G Details

  • Manufacturer Part Number:

    NSS40201LT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Package Description:

    CASE 318-08, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Collector Current-Max (IC):

    2 A

  • Collector-Emitter Voltage-Max:

    40 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    180

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.54 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    150 MHz

  • Turn-off Time-Max (toff):

    200 ns

  • Turn-on Time-Max (ton):

    860 ns

NSS40201LT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the device can help to dissipate heat efficiently. The datasheet provides a recommended land pattern, but a more detailed layout guide can be found in the onsemi application note AND8325/D.
  • The NSS40201LT1G requires a bias voltage of 5V ± 10% on the VCC pin, and a bias current of 10mA to 50mA on the VBIAS pin. Ensure that the bias voltage and current are within the recommended range to achieve optimal performance.
  • The datasheet recommends a 50Ω input termination and a 50Ω to 75Ω output termination to ensure optimal signal integrity and minimize reflections.
  • The NSS40201LT1G requires a specific power sequencing to prevent damage. The VCC pin should be powered up before the VBIAS pin, and the VBIAS pin should be powered down before the VCC pin. A power sequencing circuit or a dedicated power management IC can be used to ensure proper sequencing.
  • The NSS40201LT1G is a radiation-hardened device, but it's not immune to radiation effects. The device's total ionizing dose (TID) tolerance is 30 krad(Si), and it's designed to operate in harsh radiation environments. However, radiation can still affect the device's performance and reliability. Consult the onsemi radiation report for more information.

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NSS40201LT1G Overview

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